JPS5310286A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1976-07-16
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Granted: —
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Expires: 1996-07-16
Abstract
Abstract PURPOSE: To improve production cost and workability by beforehand making grooves of a required depth in dicing and diolating area forming regions of a substrate and performing the formation of the diffused layers of elements simultaneously with the diffusion formation of th isolating areas. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Minoru Kawakami
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 04:18
CPC Classifications
—
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