JPS5297680A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of mis type semiconductor integrated circuit device
Assignee: Hitachi Ltd
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Filing: 1976-02-12
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Granted: —
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Expires: 1996-02-12
Abstract
Abstract PURPOSE:To form MISFETs of varying threshold voltages within the same MISIC chip by employing a P type and N type for the conductivity type of a polycrystalline Si layer which forms gates.
Inventors
- 👤 Satoshi Meguro
- 👤 Koichi Nagasawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 12:48
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/02; H10D84/03; H10D84/038
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