JPS5291659A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1976-01-29
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Granted: —
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Expires: 1996-01-29
Abstract
Abstract PURPOSE:To prevent adverse effects due to leak current and increase current capacity by forming a network-like P type gate having a thicker and a thinner sections in an N type region and preparing a plurality of P<+> type shunts through selective diffusion from a main surface.
Inventors
- 👤 Yoichi Araki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 20:55
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/142; H10D62/17; H10D62/192; H10D62/206
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