JPS528779A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Schottky barrier diode
Assignee: Mitsubishi Electric Corp
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Filing: 1975-07-10
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Granted: —
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Expires: 1995-07-10
Abstract
Abstract PURPOSE: To improve inverse overvoltage withstanding of Schottky diodes by providing a guard ring layer and having it absorb overvoltage on a preferential basis. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Hiroyasu Hagino
- 👤 Hiroshi Gamo
- 👤 Takahiko Iida
- 👤 Hideaki Ikegawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 13:19
CPC Classifications
—
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