JPS5286086A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Field effect transistor
Assignee: Hitachi Ltd
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Filing: 1976-01-12
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Granted: —
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Expires: 1996-01-12
Abstract
Abstract PURPOSE: To improve the safety voltage of drain by being to lower than 10 18 /cm 3 the surface impurity density of drain diffusion layer of overlapping part to the gate electrode on the MISFET formed on the semiconductive substrate. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Hiroo Masuda
- 👤 Ken Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 10:51
CPC Classifications
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