JPS5267982A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of schottky barrier type field effect transistor
Assignee: Sanyo Electric Co Ltd
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Filing: 1975-12-03
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Granted: —
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Expires: 1995-12-03
Abstract
Abstract PURPOSE: To enhance high frequency property of Schottky barrier type FET by determining source-gate space and gate-drain spece with the thickness of oxidation which can easily be controlled. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Kiyoshi Yoneda
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 06:25
CPC Classifications
—
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