JPS5267969A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor unit
Assignee: Toshiba Corp
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Filing: 1975-12-03
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Granted: —
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Expires: 1995-12-03
Abstract
Abstract PURPOSE: To improve noise property of semiconductor element by removing insulation film of substrate main surface at final process and then by forming new insulation film plus poly Si film added by P-As or P. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Takashi Yasujima
- 👤 Kiyoshi Takaoki
- 👤 Toshio Yonezawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 03:07
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/262; H10P50/263; H10P95/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S438/00; Y10S438/911; Y10S438/958
Claims Analysis
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References Cited (Backward Citations)
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