JPS5267580A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor integrated circuit and manufacturing method thereof
Assignee: Hitachi Ltd
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Filing: 1975-12-03
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Granted: —
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Expires: 1995-12-03
Abstract
Abstract PURPOSE: To improve the voltage-withstand of a PNPTr by removing the widthwise spread of an isolation region in an IC containing PNPTr. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Masayoshi Yoshimura
- 👤 Naonobu Sato
- 👤 Noboru Horie
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 08:40
CPC Classifications
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