JPS5264881A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device and its production
Assignee: Hitachi Ltd
•
Filing: 1975-11-25
•
Granted: —
•
Expires: 1995-11-25
Abstract
Abstract PURPOSE: To obtain a semiconductor device of less forward voltage drop by vapor-growing a polycrystalline Si layer on the opposite surface of the surface for forming annular mesa grooves of a semiconductor wafer and forming a passivation film in the annular mesa grooves. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Komei Yatsuno
- 👤 Takuzo Ogawa
- 👤 Takaya Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 08:35
CPC Classifications
—
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
JPS4826066A
Cited
JPS5049980A
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.