JPS5263687A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1975-11-20
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Granted: —
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Expires: 1995-11-20
Abstract
Abstract PURPOSE: To considerably increase current riding rate at the turn-on by forming a high impurity concentration layr connected to the control electrode of a main thyristor or the cathode electrode of an auxiliary thyristor in the base layer of a thyristor. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Katsuhiro Oda
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 08:40
CPC Classifications
—
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