JPS5263686A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Non-voltatile semiconductor memory device
Assignee: Toshiba Corp
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Filing: 1975-11-20
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Granted: —
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Expires: 1995-11-20
Abstract
Abstract PURPOSE:To increase the scale of integration and increase the speed of operation by partially providing a high impurity concentration layer of the same conductivity type as that of a substrate so as not to hamper channel current at the boundary of a memory transistor region and a gate transistor region and enabling writing with avalanche injection occuring therein.
Inventors
- 👤 Hisakazu Iizuka
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 13:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/686
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