JPS5263669A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Device for production of semiconductors
Assignee: Sony Corp
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Filing: 1975-11-20
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Granted: —
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Expires: 1995-11-20
Abstract
Abstract PURPOSE:To obtain a device suitable for vapor phase epitaxial growth by providing two flow lines on the downstream of a reaction region, flowing H2 in one line, exhausting reaction gas from the other line and increasing the pressure within the first line.
Inventors
- 👤 Toshiyuki Yamada
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 15:40
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455
Claims Analysis
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