JPS5263074A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Insulated gate type field effect transistor and its production
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1975-11-14
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Granted: —
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Expires: 1995-11-14
Abstract
Abstract PURPOSE: To produce an IG-FET of a short channel length and higher performance by isolating source and drain regions with a notched portion and providing an insulating film and gate electrode along the notched face. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Yutaka Hayashi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 12:13
CPC Classifications
—
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