JPS5261980A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Toshiba Corp
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Filing: 1975-11-18
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Granted: —
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Expires: 1995-11-18
Abstract
Abstract PURPOSE:To obtain satisfactory multilayer wirings and increase the scale of integration of an IC by forming a first wiring layer on the surface of a semiconductor substrate, covering the entire surface with an insulating film of the same thickness, removing the raised portions thereof to flatten insulating film, then again depositing an insualting film over the entire surface and laminating and forming a second wiring layer thereon.
Inventors
- 👤 Shigeo Kotani
- 👤 Masaharu Aoyama
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 12:35
CPC Classifications
—
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