Pnp type transistor for semiconductor integrated circuit

Abstract

Abstract PURPOSE: To suppress the variation in base width by arranging the position of emitter-base junction in the position where the impurity concentration distributions of emitter and active regions become equal, and arranging the position of collector-base junction in the position where the distributions of a P + type diffusion region and an active base region become equal. COPYRIGHT: (C)1977,JPO&Japio

Inventors

• 👤 Yoshio Uchida
• 👤 Makoto Nozu
• 👤 Norio Nakamoto
• 👤 Masanori Oshima

Bibliographic Details