JPS525231B2 - - Google Patents

Abstract

Abstract Group III-V compound semiconductor devices with attached gold conductor areas are etched using a basic ferricyanide etchant. The etchant is an aqueous solution containing ferricyanide ions in a concentration from 0.8 molar to 1.2 molar and sodium or potassium hydroxide in a concentration from 0.3 molar to 1.5 molar. This etchant rapidly removes the semiconductor material leaving smooth surfaces, while leaving the gold conductors and areas protected by oxide layers essentially intact. The use of titanium layers as etching masks, deposited for example by evaporating or sputtering through a removable mask, is also disclosed.

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Bibliographic Details