JPS5247685A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Process for production of mos type semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1975-10-14
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Granted: —
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Expires: 1995-10-14
Abstract
Abstract PURPOSE: To beforehand form overhangs by etching a polycrystalline Si film with an Al film as a mask, thereby achieving flattening of the surface and preventing the disconnection and leakage of wiring electrodes. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Hiroshi Kuroda
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-06 04:16
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS49110276A
Cited
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