JPS5244584A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Method of treating semiconductor substrate
Assignee: Panasonic Holdings Corp
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Filing: 1975-10-06
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Granted: —
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Expires: 1995-10-06
Abstract
Abstract PURPOSE:To combine selective deposition of Si3N4 and epitaxial growth of Si thereby obtaining a flat and thick oxide film that does not cause disconnection in wiring to be formed later.
Inventors
- 👤 Tatsunori Nakajima
- 👤 Kosei Kajiwara
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 11:21
CPC Classifications
—
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