JPS5228888A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Emission semiconductor device
Assignee: Semiconductor Research Foundation
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Filing: 1975-08-29
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Granted: —
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Expires: 1995-08-29
Abstract
Abstract PURPOSE: To fix N type layer by overlaying crystal of wide forbidden band on the portion of emission junction and to make emission of P layer efficiently. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Junichi Nishizawa
- 👤 Yasuo Okuno
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 20:14
CPC Classifications
—
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