JPS5226419A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Dc boosting circuit
Assignee: NEC Corp
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Filing: 1975-08-25
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Granted: —
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Expires: 1995-08-25
Abstract
Abstract PURPOSE: The DC boosting circuit giving the high converting efficiency which enable to be manufactured on the same base board in the same process as the semi-conductive integrated circuit including the mutual compensating IGFET made up of the IGFET(insulating gate field effective transistor). COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Tojiro Takegawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-25 04:16
CPC Classifications
—
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