JPS5225583A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Field effect transistor
Assignee: NEC Corp
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Filing: 1975-08-21
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Granted: —
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Expires: 1995-08-21
Abstract
Abstract PURPOSE: To reduce the leak current, by means of covering the circumferences of source and drain region being installed on the epitaxial layer on the surface of semiconductor base-plate through detaching them each other. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Toru Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 04:48
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS502481A
Cited
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