JPS5222480A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Insulating gate field effect transistor
Assignee: NTT Inc
•
Filing: 1975-08-14
•
Granted: —
•
Expires: 1995-08-14
Abstract
Abstract PURPOSE: To lower the threshold voltage and prevent the dependence on the channel processing accuracy by limiting the rate occupied by the depletion layer of the channel area. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Akira Ishida
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 10:55
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/299; H10D62/307; H10D30/00; H10D30/60
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
JPS4931509U
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.