JPS5221782A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Producing system and unit of semiconductor
Assignee: Toshiba Corp
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Filing: 1975-08-13
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Granted: —
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Expires: 1995-08-13
Abstract
Abstract PURPOSE: To be free from stage cutting of round body and crack by heat treatment of SiO 2 film including the appointed volume of P 2 O 5 and B 2 O 5 fointly used. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Teruo Yoneyama
- 👤 Yasuo Iizuka
- 👤 Hiroshi Nakasone
- 👤 Noboru Okuyama
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-28 23:22
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS50114172A
Cited
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