JPS5221781A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor unit producing system
Assignee: NEC Corp
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Filing: 1975-08-12
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Granted: —
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Expires: 1995-08-12
Abstract
Abstract PURPOSE: To form insulating-separating layer by oxidizing polysiloxane filled in groove getting to base plate. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Masahiko Nakamae
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-28 22:50
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS4869485A
Cited
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