JPS52119085A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor memory element
Assignee: NEC Corp
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Filing: 1976-03-10
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Granted: —
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Expires: 1996-03-10
Abstract
Abstract PURPOSE:To obtain a memory element of MIS structure by providing a conductive passage within the semiconductor substrate and forming a porming a portion which is able to accumulate and discharge electric charge adjacent to the former.
Inventors
- 👤 Mototaka Kamoshita
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-01 07:58
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30
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