JPS52117584A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Mos type semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1976-03-29
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Granted: —
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Expires: 1996-03-29
Abstract
Abstract PURPOSE: To enable SOS , MOS type semiconductor having faster operational speed and less variation in Vth, by making higher then impurity density at the drain domain draw out section, and by shortening only to the source domain PN junction with the alloy layer consisting of the electrode metal and semiconductor base. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Satoru Kawazu
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 10:04
CPC Classifications
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