JPS52113684A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1976-03-19
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Granted: —
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Expires: 1996-03-19
Abstract
Abstract PURPOSE: To improve the mutual conductances of transistors and make possible high speed operation by electrically floating the channel forming regions of a C-MOSFET from a substrate at PN junctions. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Yoshiyuki Takagi
- 👤 Takeshi Ishihara
- 👤 Takeya Ezaki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-05 19:17
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0278; H10D30/0221
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