JPS51116687A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor integrated circuit device
Assignee: Hitachi Ltd
•
Filing: 1975-04-07
•
Granted: —
•
Expires: 1995-04-07
Abstract
Abstract PURPOSE:A device which is constructed compatibly with a standard IC, is provided with an injection electrode having a high injection efficiency, and is effective in obtaining an I<2>L of a high hFE longitudinal transistor.
Inventors
- 👤 Tomoyuki Watabe
- 👤 Takahiro Okabe
- 👤 Yoshito Omura
- 👤 Hiroshi Kodera
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 20:58
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/65; H10D84/658
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.