Magnetic thin film memory element, method of manufacturing the same, and recording / reproducing method

Abstract

Abstract Translated from Japanese (57)【要約】 【課題】 高集積化が可能であり、情報の高い保存安定 性を有し、安定して記録再生可能な磁性薄膜メモリ素子 を提供する。 【解決手段】 基板上に、主に膜面内の一方向に磁化配 向しており低い保磁力を有する第１磁性層と、主に膜面 内の一方向に磁化配向しており高い保磁力を有する第２ 磁性層が非磁性層を介して積層され、第１磁性層の磁化 と第２磁性層の磁化が平行の時は低い抵抗値を示し、反 平行の時は高い抵抗値を示す磁気抵抗素子であって、外 部磁界が０の時に、第１磁性層が非磁性層の端面に接す るように湾曲して第２磁性層の端面と接する、あるいは 第２磁性層が非磁性層の端面に接するように湾曲して第 １磁性層の端面と接することにより閉磁路構成をなす磁 性薄膜メモリ素子。 (57) [Problem] To provide a magnetic thin film memory element which can be highly integrated, has high storage stability of information, and can perform stable recording and reproduction. SOLUTION: On a substrate, a first magnetic layer having a low coercive force mainly magnetized in one direction in a film plane and a high coercive force mainly magnetized in one direction in a film plane. The second with A magnetic resistance element in which a magnetic layer is stacked with a non-magnetic layer interposed therebetween and shows a low resistance value when the magnetization of the first magnetic layer and the magnetization of the second magnetic layer are parallel, and shows a high resistance value when the magnetization is antiparallel. When the external magnetic field is 0, the first magnetic layer is curved so as to be in contact with the end face of the non-magnetic layer and is in contact with the end face of the second magnetic layer, or the second magnetic layer is in contact with the end face of the non-magnetic layer. A magnetic thin-film memory element having a closed magnetic circuit configuration by being curved in contact with an end face of a first magnetic layer.

Inventors

• 👤 Naoki Nishimura
• 👤 直樹 西村

Bibliographic Details