Method for manufacturing insulating film by chemical vapor deposition

Abstract

Abstract PURPOSE: To form a so-called low dielectric coefficient film having high embedding ability and a low dielectric coefficient by using material gas including at least methylfluorosilane and water or methylfluorosilane and hydrogen peroxide. CONSTITUTION: Material gas to be used for chemical vapor phase epitaxy should include at least methylfluorosilane and water or methylfluorosilane and hydrogen peroxide. For example, a plurality of interconnections 12 are formed on a substrate 11, and then a protection film 13 is formed by means of plasma CVD to cover the respective interconnections 12. Then material gas being a mixture of Si (CH3 )2 F2 , Si (CH3 ) F3 and H2 O is introduced to a low pressure CVD apparatus to form an insulation film 14 of silicon oxide on the protection film 13. Then after a silicon oxide film is formed by means of CVD as another insulation film 15 on an upper face of the insulation film 14, annealing is performed to remove moisture in the insulation film 14.

Inventors

• 👤 Toshiaki Hasegawa
• 👤 利昭 長谷川

Bibliographic Details