Nonvolatile semiconductor memory device and manufacturing method thereof

Abstract

Abstract Translated from Japanese (57)【要約】 【目的】 製造の容易な構造の不揮発性半導体記憶装置 を提供する。 【構成】 一導電型半導体基板１１中にソース領域１３ およびドレイン領域１２を設け、半導体基板１１上に素 子分離絶縁膜１４によって分離された活性領域を設け た。そして、ソース領域１３およびドレイン領域１２に 挟まれ、ソース領域１３に接する所定のチャネル領域上 に、ゲート絶縁膜１５を形成し、さらにゲート絶縁膜１ ５上に浮遊ゲート電極１６を設けた。浮遊ゲート電極１ ６上には、層間絶縁膜１７を介して、同時に形成した制 御ゲート電極２０と消去ゲート電極２１を配置した。 (57) [Summary] [Object] To provide a nonvolatile semiconductor memory device having a structure that is easy to manufacture. [Structure] A source region 13 is formed in one conductivity type semiconductor substrate 11. Then, the drain region 12 is provided, and the active region isolated by the element isolation insulating film 14 is provided on the semiconductor substrate 11. Then, the gate insulating film 15 is formed on a predetermined channel region which is sandwiched between the source region 13 and the drain region 12 and is in contact with the source region 13, and the gate insulating film 1 is further formed. Floating gate electrode 16 was provided on top of No. 5. Floating gate electrode 1 A control gate electrode 20 and an erase gate electrode 21 which were formed at the same time were arranged on the layer 6 via an interlayer insulating film 17.

Inventors

• 👤 Michio Morita
• 👤 倫生 森田

Bibliographic Details