JPH05211331A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
MIS FET device and manufacturing method thereof
Assignee: NEC Corp
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Filing: 1992-01-30
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Granted: —
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Expires: 2012-01-30
Abstract
Abstract Translated from Japanese (57)【要約】 【構成】ＭＩＳ型ＦＥＴ装置のしきい値調整にボロンの 代りにガリウム、あるいはインジウムを用いる。又、製 造方法としてガリウム、あるいはインジウムをイオン注 入する。 【効果】ガリウム、あるいはインジウムは質量数がボロ ンよりも大きくしたがって浅い拡散層を実現できる。 (57) [Summary] [Construction] Gallium or indium is used instead of boron for the threshold adjustment of the MIS FET device. As a manufacturing method, gallium or indium is ion-implanted. [Effect] Since gallium or indium has a mass number larger than that of boron, a shallow diffusion layer can be realized.
Inventors
- 👤 Hitoshi Abiko
- 👤 仁 安彦
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 01:49
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