Patent FR11239E successfully refreshed from Google Patents.
JPH05190849A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: Oki Electric Industry Co Ltd
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Filing: 1992-01-14
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Granted: —
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Expires: 2012-01-14
Abstract
Abstract PURPOSE:To reduce the diffusion of impurity more than necessity by the inhibit effect of C on impurity diffusion through introducing C into a region where the impurity diffusion is intended in a silicon substrate. CONSTITUTION:In the manufacture of a semiconductor device, the semiconductor device is formed in such manner that C ion is implanted beforehand in a source- drain region 15 (b) and then B ion is implanted in the implantation region of the C ion (c) and is covered by C and thereafter the semiconductor device is subjected to heat treatment.
Inventors
- 👤 Akira Tanaka
- 👤 陽 田中
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 04:26
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
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