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JPH05190848A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Method for manufacturing MOSFET
Assignee: Oki Electric Industry Co Ltd
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Filing: 1992-01-14
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Granted: —
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Expires: 2012-01-14
Abstract
Abstract PURPOSE:To form a source-drain diffusion layer only at a desired place without an impurity being diffused to the inner part under a gate electrode. CONSTITUTION:In the manufacture of MOSFET, a point defect region 26 is formed beforehand at a place, into which an impurity is desired to be introduced, by the implantation of electrically inert Si ion through thermal diffusion method and the impurity is anisotropically diffused by the speed-increasing diffusion through this point defect region 26 so that a source-drain diffusion layer 27 is formed.
Inventors
- 👤 Akira Tanaka
- 👤 陽 田中
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 19:49
CPC Classifications
—
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