Manufacture of thin film transistor

Abstract

Abstract PURPOSE:To simplify the manufacturing process of a thin film transistor and to make it possible to from a channel protective film with good accuracy by a method wherein an opaque gate electrode is formed in such a way that the width of the gate electrode is changed in the width direction of a channel and the channel protective film is formed in a self-alignment manner using this gate electrode as a mask. CONSTITUTION:An opaque gate electrode 12 is formed on a light-transmitting insulating substrate 11. The width of this electrode is formed in such a way that it is changed periodically in the width direction of a channel. Then, a first gate insulating film 13 and a second gate insulating film 14 are formed in order. Then, an amorphous silicon (a-Si) film 15 and a silicon nitride film 16 are deposited in order. A back exposure using ultraviolet rays 18 is performed using the electrode 12 as a mask and a channel protective film 19 is formed. After this, an etching is performed on the films 15 and 14 and an active layer 20 is formed over the electrode 12 in a self-alignment manner. Then, an N<+> a-Si film 21 is formed, the film 19 is also etched simultaneously and an insular channel protective film 19 is formed. Lastly, a contact layer 22 and source and drain electrodes 23 and 24 are formed.

Inventors

• 👤 Shiyuuichi Uchikoga
• 👤 修一 内古閑

Bibliographic Details