Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To eliminate an overhang shape at the shoulder part of a barrier layer and to deposit a W film which does not contain any void by a method wherein, after a contact has been formed, a barrier layer is formed by a CVD method, the W film is then deposited on the whole surface and the contact is filled. CONSTITUTION:An insulating film 2 is laminated on the whole surface of a semiconductor substrate 1. A contact part 3 is formed; after that, it is filled with a tungsten film 5. In this process, the contact part 3 is formed; after that, a barrier film, of a fine crystal or amorphous structure, which is composed of tungsten silicide, titanium silicide or titanium nitride is laminated, by using a CVD method, on the whole surface of the insulating substrate 1 including the insulating film 2; in succession, the tungsten film is laminated on the whole surface by a CVD method.

Inventors

• 👤 Tsutomu Yamadai
• 👤 山台　力

Bibliographic Details