Method of heteroepitaxial development of iii-v group compound semiconductor for different types of substrates

Abstract

Abstract PURPOSE:To carry out one-time heteroepitaxial development of III-V group compound semiconductor with less dislocation on a different type of substrate by clamping dielectric film between the substrate and the development layer, followed by carrying out the development by the total gaseous phase development method. CONSTITUTION:On a substrate, first a SiO2 film 11 is prepared by the thermal oxidation method, followed by removing the SiO2 film 11 in stripes in the direction of <112> to prepare stripe windows to expose the Si surface. Next, this substrate is treated for heat cleaning by using hydrogen carrier gas, followed by lowering the temperature of the heat cleaning, further followed by using the hydride gaseous phase development method to develop an undoped GaAs buffer layer 12. After that, GaAs layer 13 is developed in the condition that a development speed in the <111>B direction is sufficiently greater than that in the <110> direction to develop the GaAs 13 rectangularly. Next, the lateral development of a GaAs 14 is carried out in the direction of <110> in the condition that a development speed in the <110> direction is sufficiently greater than that in the <111>B direction. Finally, a GaAs 15 is developed to have a thickness of 5mum in the condition that a development speed on the surface of <111>B is sufficiently great.

Inventors

• 👤 Naotaka Kuroda
• 👤 尚孝 黒田

Bibliographic Details