Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To inhibit the generation of cavities in the interface between a thin oxide film and a thick polycrystalline Si layer by a method wherein after the thin oxide film is formed, melted Si is dripped and solifified by a melt spray method. CONSTITUTION:A seed crystal Si layer 13 (a polycrystalline Si layer) is formed on the side of the upper surface of an isolation insulating film 12 in a thickness of 10 to 30mum or thereabouts by the thermal decomposition of SiH4 or the like, for examle. After that, a thin oxide film 14 is formed on the upper surface of the layer 13 by a thermal oxidation method or a CVD method. Then, a substrate is arranged on a turntable 48 in a spray device 41 facing the surface of the film 14 upward by an MSSD method. After that melted Si is dripped and solidified, whereby a thick polycrystalline Si layer 15 is obtained. At this time, when the thin film 14 is solidified after being melted along with the vicinity of the surface of the layer 13, it is turned into one part of this thick layer 15. After that, the side of the main surface on the other side of the semiconductor substrate 11 is polished and removed.

Inventors

• 👤 Taiji Usui
• 👤 臼井　太二

Bibliographic Details