Manufacture of compound semiconductor crystal

Abstract

Abstract PURPOSE:To prevent the formation of a twin CdTe crystal having a crystal growing plane in (110) plane on a substrate by using a semiconductor crystal, in which the plane having the plane azimuth of (100) plane perpendicular to (100) axis is inclined in the direction of (111) plane by a prescribed angle, as the substrate and forming a compound semiconductor crystal containing cadmium by vapor growth on the substrate. CONSTITUTION:A GaAs substrate 32 with an off-angle formed by inclining (100) crystal plane by 2 deg. in the direction of (111) plane is placed in a container 1 at a prescribed interval from a section above a source crucible 33 and thermal cleaning is performed by heating the substrate 32 to 6O0 deg.C with a heater 34 after the container 31 is evacuated to a high vacuum condition. After the heat cleaning, the substrate 32 is moved to the section above the crucible 33 by turning a substrate placing table 35 and a CdTe source in the crucible 33 is evaporated by lowering the temperature of the substrate to 350 deg.C and raising the temperature of the crucible 33 to 530 deg.C so as to allow the evaporated component of the source to adhere onto the substrate and a CdTe crystal to grow. Therefore, a high-quality CdTe crystal of (111) plane is obtained, since no (111)-plane twin crystal, the two individuals of which have crystal axes which are rotated by 90 deg. against each other, is formed on the (100)-plane GaAs substrate.

Inventors

• 👤 Yoshito Nishijima
• 👤 西嶋　由人
• 👤 Iwao Sugiyama
• 👤 巌 杉山

Bibliographic Details