Semiconductor device

Abstract

Abstract PURPOSE:To constitute a protective circuit having a large surge resistance by using a diode which uses a terminal which electrically connects a gate electrode to a high-concentration area of the first conductivity as an anode and a terminal led out from another area of the second conductivity as a cathode as a surge protective element. CONSTITUTION:A gate electrode 3 of a polycrystalline silicon film is formed on a P-type semiconductor substrate 1 with a silicon oxide film 2 having a thickness of 500Angstrom in between. An P-type and N-type areas 4 and 5 and are respectively formed in the substrate 1 on both sides of the electrode 3. Then a diode is formed by forming an anode 7 by electrically connecting the electrode 3 with the electrode 6 of the high-concentration P-type area 5 and a cathode 9 by using the electrode 8 of the N-type area 4. When a negative surge voltage is applied across the cathode 9, a forward bias is applied to the diode and the surge is absorbed. When a reverse bias, namely, a positive surge voltage is applied across the cathode 9, the breakdown of the diode necessarily occurs at the junction between the N-type area 5 and P-type semiconductor substrate 1 below the gate electrode 3.

Inventors

• 👤 Yuji Yamanishi
• 👤 山西　雄司
• 👤 Hiroshi Tanida
• 👤 宏 谷田

Bibliographic Details