Formation of phase shift mask

Abstract

Abstract PURPOSE:To form phase shifters in a self-alignment system by forming a phase shift film on the surface of a previously formed photomask and further applying a resist thereon, then radiating the resist with light from a glass substrate surface side. CONSTITUTION:Mask patterns 2 consisting of Cr etc., are previously accurately formed on the glass substrate 1, by which the photomask is formed. The phase shift film 31 consisting of SiO2, etc., is formed on this photomask over the entire surface and further the resist 41 is applied over the entire surface. The resist is thereafter irradiated with the UV light 5 from the glass substrate 1 side and is thereby exposed over the entire surface. This photomask is then developed to form resist patterns 4. The line width of the patterns 4 can be controlled with high accuracy by the exposure of the UV light 5. The phase shift mask is then etched by using the resist patterns 4 as a mask to form the phase shifters 3. The phase shift mask having the high accuracy is obtd. by the self-alignment system in this way.

Inventors

• 👤 Akira Shigetomi
• 👤 重富　晃

Bibliographic Details