Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To easily improve step coverage by making the sectional forms of a high concentration impurity added semiconductor layer and a metal film stepwise. CONSTITUTION:A high concentration impurity added semiconductor layer 11 is formed on a semiconductor substrate 10, and a metal film 12 is deposited on said layer 11. On the metal film 12, a photo resist film 13 is arranged, and the metal film 12 is patterned by using the film 13 as a mask. By heat-treating the photo resist film 13, it is fluidized and covers the side surface of the metal film 12. By using the photo resist film 13 as a mask, the high concentration impurity added semiconductor layer 11 is etched. Since the metal film 12 is covered with the photo resist film 13, only the high concentration impurity added semiconductor layer 11 is etched, and the sectional forms of the high concentration impurity added semiconductor layer 11 and the metal film 12 are made step-wise. Thereby the step coverage of a gate insulating film 14 which is formed in the next process is improved, and gate breakdown strength can be improved.

Inventors

• 👤 Takayuki Tominaga
• 👤 隆行 冨永
• 👤 Nobuyoshi Sakakibara
• 👤 伸義 榊原

Bibliographic Details