Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To effectively electrochemically treat at an independent part even if an electrode or a wiring is electrically independently disposed by conducting to the electrode or the wiring exposed from the opening of a conductive mask connected to an anode or cathode side. CONSTITUTION:In a glass board l formed with a conductive mask 4, a continuous wiring 2 exposed from the opening 5 of a mask 4 and an independent wiring 3 are conducted through the mask 4 connected to an anode + side. Thus, the wiring 2 and the wiring 3 can effectively be anodized in predetermined positions irrespective of whether a gate electrode and a lower wiring of a MOS type transistor are electrically independently disposed or not. Accordingly, since an insulating layer interposed between the electrodes or between the upper and lower wirings is formed in a 2-layer structure of a silicon nitride film and a tantalum oxide film, its insulating strength is enhanced to improve yield at the time of manufacturing and its withstand voltage can be improved.

Inventors

• 👤 Shigeru Yamamoto
• 👤 滋 山本
• 👤 Taketo Hikiji
• 👤 丈人 曳地
• 👤 Ichiro Asai
• 👤 浅井　市郎

Bibliographic Details