Formation of amorphous silicon carbide film containing microcrystal

Abstract

Abstract PURPOSE:To form an amorphous silicon carbide film contg. microcrystals at a low temp. with high reproducibility by making the pressure of gases at the time of discharge higher than the conventional pressure when a film is formed by microwave plasma CVD in a magnetic field. CONSTITUTION:When the title silicon carbide film is formed by microwave plasma CVD in a magnetic field, SiH4 as an Si atom-contg. gas and CH4 as a C atom-contg. gas are used as film forming gases diluted with H2 as an exciting gas in >=50 vol. ratio of H2 to SiH4+CH4 and the pressure of the gases at the time of discharge is regulated to 2.5X10<-3>-5.0X10<-2> Torr. The pref. vol. ratio of CH4 to SiH4 is 1-4 and the SiH4 is preferably mixed with 0.1-5 vol.% PH3 or B2H6 as a doping gas.

Inventors

• 👤 Toushirou Futaki
• 👤 二木　登史郎
• 👤 Shusuke Mimura
• 👤 秀典 三村
• 👤 Kazuhiko Kawamura
• 👤 和彦 河村
• 👤 Noboru Otani
• 👤 昇 大谷
• 👤 Yasumitsu Ota
• 👤 泰光 太田
• 👤 Masakazu Katsuno
• 👤 正和 勝野

Bibliographic Details