Apparatus for vapor epitaxial growth

Abstract

Abstract PURPOSE:To rotate a substrate with a simple structure and enable smooth rotation of the substrate by providing a construction for equipping a rotating shaft of a mechanism for rotating a substrate with blades, blowing an inert gas on the blades and rotating the substrate. CONSTITUTION:A rotating shaft 8 having the upper part integrated with a substrate holder 3 is supported with bearings 10 and installed in a space divided with partition walls 6 and 7. The partition wall 7 is provided with an inert gas feed port 11 for rotation and a vent port 12. Four blades 9 are further installed in the rotating shaft 8 in nearly a crossed form. An inert gas (e.g. hydrogen gas) is fed from a feed system on the outside through the feed port 11 and blown on the blades 9 to rotate the substrate holder 3 integral with the rotating shaft 8. The rate of the blown gas is changed to control the number of revolutions. A compound semiconductor is then grown on the substrate 18 by a vapor epitaxial method while rotating the substrate 18 through the substrate holder 3.

Inventors

• 👤 Masato Matsushima
• 👤 松島　政人

Bibliographic Details