Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain the manufacture of a semiconductor, which generates a proximity effect and in which the dimensional error of a pattern at the time of exposure is removed, by conducting first exposure by using a reticule, in which a dummy pattern unnecessary on circuit operation is formed around a sparse pattern, and performing second exposure by employing a reticule, in which only the dummy pattern is taken off. CONSTITUTION:A positive type photo-resist 5 is exposed by employing a reticule 6 shaped by patterning chromium on silica glass in order to form a gate electrode pattern. Since dummy resist patterns 9, 10 are formed adjoined to a sparse resist pattern 11 at that time, the pattern 11 receives the same proximity effect as a dense resist pattern 12. The dummy patterns 9, 10 formed by first exposure are exposed in place of a reticule 13 for exposure for removing the dummy patterns 9, 10 by the reticule 6 after the completion of exposure. Developing is conducted after second exposure, the dummy patterns 9, 10 sections shaped for the first time are taken off, and a photo-resist pattern is formed. Accordingly, dimensional errors in the sparse and dense patterns 11, 12 can be suppressed to one third or less of conventional devices.

Inventors

• 👤 Shinichi Horiba
• 👤 堀場　信一

Bibliographic Details