Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To effectively bury conductive substance selectively in a deep contact hole having large aspect ratio by emitting an ion beam to a board obliquely to a rotating axis while rotating a substrate. CONSTITUTION:In an ion implanting apparatus, a silicon ion beam is emitted to a semiconductor substrate 1 while a substrate holder for placing the substrate 1 is being rotated with an axis perpendicular to the surface of the substrate 1 as a center. An angle between the direction of the axis perpendicular to the substrate 1 and an ion beam advancing direction is about 7 degrees, and the rotating speed of the substrate 1 is 90-120rpm. The side of the contact hole 4 is modified by ion implanting so as to deposit a metal film on the part. A modified layer 6 is uniformly formed in the side of the hole 4 since the substrate 1 is rotated at the time of ion implanting.

Inventors

• 👤 Osamu Yamazaki
• 👤 治 山崎
• 👤 Yoshiyuki Takegawa
• 👤 宜志 竹川
• 👤 Katsunori Mihashi
• 👤 克典 三橋
• 👤 Keiichiro Uda
• 👤 啓一郎 宇田

Bibliographic Details