Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form two Al wiring layers on a flat section so as to prevent the trouble of disconnection, reduce the manufacturing cost, and improve the productivity by filling a via hole section with Ni and Au. CONSTITUTION:After the first Al wiring layer 3 is formed on an insulating film by a sputtering method and an interlayer insulating (SiO2) layer 4 is formed on the layer 3 by a CVD method, a via hole 5 is formed in the layer 4 by photoetching. Then, in order to activate the surface of the Al in the via hole section 5 by replacing the Al with Pd, the entire body is dipped in an activating liquid composed mainly of PdCl2, and a Pd active layer 6 is formed on the surface of the Al in the hole section 5. Then the entire body is dipped in an Ni hypophosphite solution bath and the layer 6 is replaced with an Ni film layer 7. Thereafter, the entire body is dipped in an electroless Au plating bath holding a solution composed mainly of AuCN and citric acid so as to completely cover the via hole 5 with an Au filling layer 8. Finally, the second Ni film layer 9 and the second Al wiring layer are formed.

Inventors

• 👤 Hiroaki Murakami
• 👤 裕昭 村上

Bibliographic Details