Patent US5445509A successfully refreshed from Google Patents.
JPH0443631A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Growth method of compound semiconductor crystal and equipment therefor
Assignee: Fujitsu Ltd
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Filing: 1990-06-11
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Granted: —
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Expires: 2010-06-11
Abstract
Abstract Translated from Japanese (57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Inventors
- 👤 Junji Saito
- 👤 斎藤 淳二
- 👤 Katsuji Ono
- 👤 克二 小野
- 👤 Takeshi Maeda
- 👤 毅 前田
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-07 08:11
CPC Classifications
—
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