Manufacture of semiconductor integrated circuit

Abstract

Abstract PURPOSE:To improve the uniformity of the film thickness of a capacitor insulating film in semiconductor substrates and between the semiconductor substrates and to make it possible to form a highly reliable capacitor by a method wherein a silicon dioxide film on a polycrystalline silicon film is removed using HCl gas diluted with inert gas in a CVD device and thereafter, a silicon nitride film is formed. CONSTITUTION:A polycrystalline silicon film 2 is formed on a semiconductor substrate 1 and the film 2 is used as an electrode by an impurity diffusion. Then, the substrate is put in a CVD device in a nitrogen gas atmosphere. At this time, a silicon dioxide film 3 is formed on the film 2. Then, the interior of a furnace is stabilized in a nitrogen gas atmosphere, HCl gas diluted with nitrogen gas is introduced in the device in about 5% of a flow rate ratio and the film 3 on the film 2 is etched and removed. Subsequently, a silicon nitride film 4 is formed. Moreover, a thermal oxidation is performed in the high- temperature heat-treating furnace, a silicon dioxide film 5 is formed, a polycrystalline silicon film 6 is formed thereon and a laminated capacitor insulating film is formed.

Inventors

• 👤 Tetsuo Ishida
• 👤 哲夫 石田

Bibliographic Details